NSCT817-25LT1G

NSCT817−25LT1G, NSCT817−40LT1G General Purpose Transistors NPN Silicon Features These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 45 V 50 V 5.0 V 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM xxx M G G 1 xxx = Specific Device Code (725 for −25 device) (74L for −40 device) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping†...