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NP36N055HLE Dataheets PDF



Part Number NP36N055HLE
Manufacturers Renesas
Logo Renesas
Description N-Channel Power MOSFET
Datasheet NP36N055HLE DatasheetNP36N055HLE Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER NP36N055HLE PACKAGE TO-251 (JEITA) / MP-3 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A) • Low Ciss : Ciss =.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER NP36N055HLE PACKAGE TO-251 (JEITA) / MP-3 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode NP36N055ILE Note NP36N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) ID(DC) ID(pulse) PT ±36 ±144 1.2 A A W (TO-252) Total Power Dissipation (TC = 25°C) PT 120 W Single Avalanche Current Note2 IAS 36 / 33 A Single Avalanche Energy Note2 EAS 12 / 108 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to + 175 °C Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14156EJ4V0DS00 (4th edition) Date Published July 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1999, 2005 NP36N055HLE, NP36N055ILE, NP36N055SLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 5 V, ID = 18 A VGS = 4.5 V, ID = 18 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 18 A VGS = 10 V RG = 1 Ω Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Note Pulsed tf QG1 QG2 QGS QGD VF(S-D) trr Qrr VDD = 44 V, VGS = 10 V, ID = 18 A VDD = 44 V VGS = 5 V ID = 18 A IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/µs MIN. 1.5 11 TYP. 2 23 10 12 13 2900 370 180 22 14 69 12 53 30 9 15 1.0 42 60 MAX. 10 ±10 2.5 13 16 18 4400 560 330 48 36 140 29 80 45 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. RG PG. VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D14156EJ4V0DS NP36N055HLE, NP36N055ILE, NP36N055SLE TYPICAL CHARACTERISTICS (TA = 25°C) dT - Percentage of Rated Power - % Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W 100 120 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature - ˚C Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 100 10 R(aDSt(oVnG) SLi=m1it0edV) ID(pulse) ID(DC) DC LiPmoitweder Dissipation 1 ms PW = 100 µs 10 µs 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature - ˚C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 120 108 mJ 100 80 IAS = 33 A 60 36 A EAS- Single Avalanche Energy - mJ 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100 40 20 12 mJ 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C 1000 Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH ID - Drain Current - A 100 Rth(ch-A) = 125 ˚C/W rth(t) - Transient Thermal Resistance - ˚C/W 10 1 Rth(ch-C) = 1.25 ˚C/W 0.1 0.01 10 µ 100 µ 1 m 10 m 100 m 1 PW - Pulse Width - s Single Pulse TC = 25˚C 10 100 1000 Data Sheet D14156EJ3V0DS 3 ID - Drain Current - A | yfs | - Forward Transfer Admittance - S NP36N055HLE, NP36N055ILE, NP36N055SLE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 10 TA = −55˚C 1 25˚C 75˚C 150˚C 175˚C 0.1 0.01 1 2 345 VGS - Gate to Source Voltage - V 6 Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS=10V Pulsed 10 T.


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