Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HLE, NP36N055ILE, NP36N055SLE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.
PART NUMBER NP36N055HLE
PACKAGE TO-251 (JEITA) / MP-3
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode
NP36N055ILE Note NP36N055SLE
Note Not for new design.
TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC) Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
ID(DC) ID(pulse)
PT
±36 ±144 1.2
A A W
(TO-252)
Total Power Dissipation (TC = 25°C)
PT
120 W
Single Avalanche Current Note2
IAS
36 / 33
A
Single Avalanche Energy Note2
EAS 12 / 108 mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg –55 to + 175 °C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.25 °C/W 125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14156EJ4V0DS00 (4th edition) Date Published July 2005 NS CP(K) Printed in Japan
The mark shows major revised points.
1999, 2005
NP36N055HLE, NP36N055ILE, NP36N055SLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time
IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on)
tr td(off)
VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 5 V, ID = 18 A VGS = 4.5 V, ID = 18 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 18 A VGS = 10 V RG = 1 Ω
Fall Time Total Gate Charge
Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge
Note Pulsed
tf QG1 QG2 QGS QGD VF(S-D) trr Qrr
VDD = 44 V, VGS = 10 V, ID = 18 A VDD = 44 V VGS = 5 V ID = 18 A IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/µs
MIN.
1.5 11
TYP.
2 23 10 12 13 2900 370 180 22 14 69 12 53 30 9 15 1.0 42 60
MAX. 10 ±10 2.5
13 16 18 4400 560 330 48 36 140 29 80 45
UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG PG.
VGS 0
τ
τ = 1 µs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
2 Data Sheet D14156EJ4V0DS
NP36N055HLE, NP36N055ILE, NP36N055SLE
TYPICAL CHARACTERISTICS (TA = 25°C)
dT - Percentage of Rated Power - %
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
140
PT - Total Power Dissipation - W
100 120
100 80
80 60
60 40
40
20 20
0 0 25 50 75 100 125 150 175 200 TC - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA 1000
100 10
R(aDSt(oVnG) SLi=m1it0edV)
ID(pulse)
ID(DC) DC
LiPmoitweder Dissipation
1 ms
PW = 100 µs
10
µs
0 0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR
120 108 mJ
100
80 IAS = 33 A
60 36 A
EAS- Single Avalanche Energy - mJ
1
TC = 25˚C
Single Pulse 0.1
0.1 1
10
VDS - Drain to Source Voltage - V
100
40
20 12 mJ 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
ID - Drain Current - A
100 Rth(ch-A) = 125 ˚C/W
rth(t) - Transient Thermal Resistance - ˚C/W
10 1 Rth(ch-C) = 1.25 ˚C/W
0.1
0.01 10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse TC = 25˚C
10 100 1000
Data Sheet D14156EJ3V0DS
3
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - S
NP36N055HLE, NP36N055ILE, NP36N055SLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = −55˚C 1 25˚C
75˚C 150˚C 175˚C 0.1
0.01 1
2 345 VGS - Gate to Source Voltage - V
6
Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100 VDS=10V Pulsed
10 T.