NP36N055SLE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER NP36N055HLE PACKAGE TO-251 (JEITA) / MP-3 FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A) Low Ciss : Ciss = 2900 pF TYP. Built-in gate protection diode NP36N055ILE Note NP36N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) ID(DC) ID(pulse) PT ±36 ±144 1.2 A A W (TO-252) Total Power Dissipation (TC = 25°C) PT 120 W Single Avalanche Current Note2 IAS 36 / 33 A Single Avalanche Energy Note2 EAS 12 / 108 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to + 175 °C Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the l...