IRF7422D2

PD- 91412M IRF7422D2 l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. FETKY TM MOSFET & Schottky Diode A1 A2 S3 AA 8D 7D VDSS = -20V 6 D RDS(on) = 0.09Ω G4 5D Schottky Vf = 0.52V Top View SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient à Maximum -4.3 -3.4 -33 2.0 1.3 16 ± 12 -5.0 -55 to +150 Maximum 62.5 Units A W ...