N0434N

N0434N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0556EJ0100 Rev.1.00 Nov 07, 2011 Description The N0434N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) High current ID(DC) = ±100 A RoHS Compliant Ordering Information Part No. N0434N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-262 1.8 g TYP. Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 40 ±20 ±100 ±400 119 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 1.05 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH R07DS0556EJ0100 Rev.1.00 Nov 07, 2011 Page 1 of 6 N0434N Chapter Title Electrical Characteristics (TA = 25°C...