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LDTD113ZWT3G Dataheets PDF



Part Number LDTD113ZWT3G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistor
Datasheet LDTD113ZWT3G DatasheetLDTD113ZWT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost complet.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with • RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits 50 −5 to +10 500 200 150 −55 to +150 Unit V V mA mW °C °C LDTD113ZWT1G S-LDTD113ZWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking LDTD113ZWT1G S-LDTD113ZWT1G LDTD113ZWT3G S-LDTD113ZWT3G E8 E8 R1 (K) R2 (K) 1 10 1 10 Shipping 3000/Tape & Reel 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Input voltage VI(off) − − 0.3 VCC=5V, IO=100µA V VI(on) 1.5 − − VO=0.3V, IO=20mA Output voltage VO(on) − 0.1 0.3 V IO/II=50mA/2.5mA Input current II − − 7.2 mA VI=5V Output current IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 82 − − − VO=5V, IO=50mA Input resistance R1 0.7 1 1.3 kΩ − Resistance ratio R2/R1 8 10 12 − − Transition frequency fT ∗ − 200 − MHz VCE=10V, IE=−50mA, f=100MHz ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTD113ZWT1G;S-LDTD113ZWT1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) 100 VO=0.3V 50 20 10 5 2 1 500m Ta=−40°C 25°C 100°C 200m 100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) 10m 5m 2m 1m 50µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VCC=5V Ta=100°C 25°C −40°C 0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V) 3.0 Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k 500 Ta=100°C 200 25°C −40°C 100 50 VO=5V 20 10 5 2 1 500µ1m 2m 5m 10m 20m 50m 100m200m 500m OUTPUT CURRENT : IO (A) Fig. 3 DC current gain vs. output current OUTPUT VOLTAGE : VO (on) (V) 1 500m 200m 100m 50m Ta=100°C 25°C −40°C lO/lI=20 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m100m200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTD113ZWT1G;S-LDTD113ZWT1G SC−70 (SOT−323) D e1 3 HE 1 E 2 b e 0.05 (0.002) A1 A A2 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 L 0.9 0.035 0.7 0.028 1.9 0.075 ǒ ǓSCALE 10:1 mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A2 0.7 REF b 0.30 0.35 0.40 c 0.10 0.18 0.25 D 1.80 2.10 2.20 E 1.15 1.24 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.425 REF c H E 2.00 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 GENERIC MARKING DIAGRAM XXM 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Rev.O 3/3 .


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