Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
•
RoHS requirements. S- Prefix for Automotive
and
Other
Applications
Requiring
Unique
Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
50 −5 to +10
500 200 150 −55 to +150
Unit
V V mA mW °C °C
LDTD113ZWT1G S-LDTD113ZWT1G
3
1 2
SOT–323 (SC–70)
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LDTD113ZWT1G S-LDTD113ZWT1G LDTD113ZWT3G S-LDTD113ZWT3G
E8 E8
R1 (K) R2 (K) 1 10 1 10
Shipping 3000/Tape & Reel 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
− 0.3
VCC=5V, IO=100µA
V
VI(on)
1.5
−
−
VO=0.3V, IO=20mA
Output voltage
VO(on) − 0.1 0.3 V IO/II=50mA/2.5mA
Input current
II − − 7.2 mA VI=5V
Output current
IO(off)
−
− 0.5 µA VCC=50V, VI=0V
DC current gain
GI 82 − − − VO=5V, IO=50mA
Input resistance
R1 0.7 1 1.3 kΩ
−
Resistance ratio
R2/R1
8
10 12
−
−
Transition frequency
fT ∗ − 200 − MHz VCE=10V, IE=−50mA, f=100MHz
∗ Characteristics of built-in transistor
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LDTD113ZWT1G;S-LDTD113ZWT1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
100
VO=0.3V
50
20 10
5
2 1 500m
Ta=−40°C 25°C
100°C
200m 100m
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
10m 5m
2m 1m 50µ
200µ 100µ
50µ
20µ 10µ
5µ 2µ 1µ
0
VCC=5V
Ta=100°C 25°C
−40°C
0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V)
3.0
Fig.2 Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k
500
Ta=100°C
200
25°C −40°C
100
50
VO=5V
20 10
5
2 1 500µ1m 2m 5m 10m 20m 50m 100m200m 500m
OUTPUT CURRENT : IO (A)
Fig. 3 DC current gain vs. output current
OUTPUT VOLTAGE : VO (on) (V)
1 500m
200m 100m
50m
Ta=100°C 25°C
−40°C
lO/lI=20
20m 10m
5m
2m 1m 500µ 1m 2m 5m 10m 20m 50m100m200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LDTD113ZWT1G;S-LDTD113ZWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40 e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN 0.032 0.000
0.012 0.004 0.071 0.045 0.047
0.079
INCHES
NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004
0.016 0.010 0.087 0.053 0.055
0.095
GENERIC MARKING DIAGRAM
XXM
1
XX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
Rev.O 3/3
.