DatasheetsPDF.com

LDTB114EWT3G Dataheets PDF



Part Number LDTB114EWT3G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistor
Datasheet LDTB114EWT3G DatasheetLDTB114EWT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

  LDTB114EWT3G   LDTB114EWT3G



Document
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage Input voltage Output current VCC VIN IC −50 −40 to +10 −500 V V mA Power dissipation Junction temperature Storage temperature PD Tj Tstg 200 150 −55 to +150 mW C C LDTB114EWT1G S-LDTB114EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114EWT1G S-LDTB114EWT1G LDTB114EWT3G S-LDTB114EWT3G Q6 Q6 10 10 3000/Tape & Reel 10 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Input voltage Output voltage Input current Output current DC current gain VI(off) VI(on) VO(on) II IO(off) GI − −3 − − − 56 Input resistance R1 7 Resistance ratio Transition frequency ∗ Characteristics of built-in transistor R2/R1 fT ∗ 0.8 − Typ. − − −0.1 − − − 10 1 200 Max. −0.5 − −0.3 −0.88 −0.5 − 13 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −10mA IO/II= −50mA/−2.5mA VI= −5V VCC= −50V, VI=0V VO= −5V, IO= −50mA − − VCE= −10V, IE=50mA, f=100MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB114EWT1G;S-LDTB114EWT1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) -100 VO= −0.3V -50 -20 -10 -5 -2 -1 -500m Ta= −40 C 25 C 100 C -200m -100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) -10m -5m Ta= 100 C -2m 25 C −40 C -1m -500µ -200µ VCC= −5V -100µ -50µ -20µ -10µ -5µ -2µ -1µ 0 -0.5 -1 -1.5 -2 -2.5 -3 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT VOLTAGE : VO (on) (V) -1 -500m Ta=100 C -200m 25 C −40 C -100m -50m lO/lI=20 -20m -10m -5m -2m -1m -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DC CURRENT GAIN : GI 1k 500 200 Ta=100 C 25 C 100 −40 C 50 VO= −5V 20 10 5 2 1 -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB114EWT1G;S.


LDTB114EWT1G LDTB114EWT3G LDTDG12GPWT1G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)