Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage Input voltage Output current
VCC VIN IC
−50 −40 to +10
−500
V V mA
Power dissipation Junction temperature Storage temperature
PD Tj Tstg
200 150 −55 to +150
mW C C
LDTB114EWT1G S-LDTB114EWT1G
3
1 2
SOT–323 (SC–70)
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114EWT1G S-LDTB114EWT1G
LDTB114EWT3G S-LDTB114EWT3G
Q6 Q6
10 10 3000/Tape & Reel 10 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage Input current Output current DC current gain
VI(off) VI(on) VO(on)
II IO(off) GI
− −3 − − − 56
Input resistance
R1 7
Resistance ratio Transition frequency ∗ Characteristics of built-in transistor
R2/R1 fT ∗
0.8 −
Typ. − −
−0.1 − − − 10 1
200
Max. −0.5
− −0.3 −0.88 −0.5
− 13 1.2 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −10mA IO/II= −50mA/−2.5mA VI= −5V VCC= −50V, VI=0V VO= −5V, IO= −50mA
− − VCE= −10V, IE=50mA, f=100MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LDTB114EWT1G;S-LDTB114EWT1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
-100 VO= −0.3V -50
-20 -10 -5
-2 -1 -500m
Ta= −40 C 25 C
100 C
-200m
-100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
-10m
-5m Ta= 100 C
-2m
25 C −40 C
-1m
-500µ
-200µ
VCC= −5V
-100µ -50µ
-20µ
-10µ -5µ
-2µ -1µ
0 -0.5 -1 -1.5 -2 -2.5 -3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
OUTPUT VOLTAGE : VO (on) (V)
-1
-500m Ta=100 C
-200m 25 C −40 C
-100m
-50m
lO/lI=20
-20m -10m -5m
-2m -1m -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
DC CURRENT GAIN : GI
1k
500
200 Ta=100 C 25 C
100 −40 C
50
VO= −5V
20 10
5
2
1 -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LDTB114EWT1G;S.