Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D070
BAV23 General purpose double diode
Product specification Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
General purpose double diode
Product specification
BAV23
FEATURES
• Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:
max. 200 V • Repetitive peak reverse voltage:
max. 250 V • Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose where high breakdown voltages are required.
DESCRIPTION
The BAV23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected.
PINNING
PIN 1 2 3 4
handbook, halfpage4
3
1
Top view
2
4
1
MAM059
DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1)
3
2
Marking code: L30.
Fig.1 Simplified outline (SOT143) and symbol.
1996 Sep 17
2
Philips Semiconductors
General purpose double diode
Product specification
BAV23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM VRRM VR VR IF
IFRM IFSM
Ptot Tstg Tj
repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage continuous reverse voltage continuous forward current
repetitive peak forward current non-repetitive peak forward current
total power dissipation storage temperature junction temperature
series connection
series connection single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs t = 100 µs t = 10 ms Tamb = 25 °C; note 1
Note 1. Device mounted on an FR4 printed-circuit board.
MIN. −
− − −
−
−
MAX. 250 500 200 400 225
UNIT V V V V mA
125 mA
625 mA
− 9A − 3A − 1.7 A − 250 mW −65 +150 °C − 150 °C
1996 Sep 17
3
Philips Semiconductors
General purpose double diode
Product specification
BAV23
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
VF forward voltage
IR reverse current
IR reverse current
Cd diode capacitance trr reverse recovery time
CONDITIONS
see Fig.3
IF = 100 mA IF = 200 mA series connection; see Fig.3
IF = 100 mA IF = 200 mA see Fig.5
VR = 200 V VR = 200 V; Tj = 150 °C series connection
VR = 400 V VR = 400 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 series connection; f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7
MIN.
− −
− −
− − − − − − −
−
MAX. UNIT
1.0 V 1.25 V
2.0 V 2.5 V
100 nA 100 µA
100 100
5 2.5
nA µA pF pF
50 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp Rth j-a
thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE 360 500
UNIT K/W K/W
1996 Sep 17
4
Philips Semiconductors
General purpose double diode
GRAPHICAL DATA
300 IF (mA)
200
MBD033
single diode loaded
double diode loaded 100
600
handbook, halfpage
IF (mA)
400
200
Product specification
BAV23
MBG384
(1) (2)
(3)
0 0 100 Tamb ( oC) 200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
102
handbook, full pagewidth
IFSM (A)
10
0 01
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
VF (V)
2
Fig.3 Forward current as a function of forward voltage.
MBG703
1
10−1 1
10
102
103
tp (µs)
104
Based on square wave currents. Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
Philips Semiconductors
General purpose double diode
Product specification
BAV23
handbook1, 0ha2lfpage IR (µA) 10
(1)
1
(2)
MBG381
10 1
10 2 0
100 Tj (oC) 200
(1) VR = 200 V; maximum values. (2) VR = 200 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
1.0
handbook, halfpage
Cd (pF)
0.8
0.6
MBG447
0.4
0.2 0 2 4 6 VR (V) 8
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
RS = 50 Ω V = VR IF x R S
D.U.T. IF
SAMPLING OSCILLOSCOPE
R i = 50 Ω
MGA881
VR
tr 10%
tp
90%
input signal
t IF
t rr t
(1)
output signal
(1) IR = 3 mA.
1996 Sep 17
Fig.7 Reverse recovery voltage test circuit and waveforms. 6
Philips Semiconductors
General purpose double diode
PACKAGE OUTLINE
Product specification
BAV23
handbook, full pagewidth
0.75 0.60
0.150 0.090
10 o max
0.1 max
10 o max
1.1 max 30 o
max
3.0 2.8 B 1.9 A 0.2 M A B
43
1.4 2.5 1.2 max
12
0.88
0 0.1
1.7
0.48
0 0.1
TOP VIEW
0.1 M A B
MBC845
Dimensions in mm.
Fig.8 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data.