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BAV23 Dataheets PDF



Part Number BAV23
Manufacturers Philips Semiconductors
Logo Philips Semiconductors
Description General purpose double diode
Datasheet BAV23 DatasheetBAV23 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors General purpose double diode Product specification BAV23 FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose where.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors General purpose double diode Product specification BAV23 FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose where high breakdown voltages are required. DESCRIPTION The BAV23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. PINNING PIN 1 2 3 4 handbook, halfpage4 3 1 Top view 2 4 1 MAM059 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1) 3 2 Marking code: L30. Fig.1 Simplified outline (SOT143) and symbol. 1996 Sep 17 2 Philips Semiconductors General purpose double diode Product specification BAV23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRRM VR VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature series connection series connection single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t = 10 ms Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. MIN. − − − − − − MAX. 250 500 200 400 225 UNIT V V V V mA 125 mA 625 mA − 9A − 3A − 1.7 A − 250 mW −65 +150 °C − 150 °C 1996 Sep 17 3 Philips Semiconductors General purpose double diode Product specification BAV23 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER VF forward voltage VF forward voltage IR reverse current IR reverse current Cd diode capacitance trr reverse recovery time CONDITIONS see Fig.3 IF = 100 mA IF = 200 mA series connection; see Fig.3 IF = 100 mA IF = 200 mA see Fig.5 VR = 200 V VR = 200 V; Tj = 150 °C series connection VR = 400 V VR = 400 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 series connection; f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 MIN. − − − − − − − − − − − − MAX. UNIT 1.0 V 1.25 V 2.0 V 2.5 V 100 nA 100 µA 100 100 5 2.5 nA µA pF pF 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp Rth j-a thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 Note 1. Device mounted on an FR4 printed-circuit board. CONDITIONS VALUE 360 500 UNIT K/W K/W 1996 Sep 17 4 Philips Semiconductors General purpose double diode GRAPHICAL DATA 300 IF (mA) 200 MBD033 single diode loaded double diode loaded 100 600 handbook, halfpage IF (mA) 400 200 Product specification BAV23 MBG384 (1) (2) (3) 0 0 100 Tamb ( oC) 200 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 102 handbook, full pagewidth IFSM (A) 10 0 01 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. VF (V) 2 Fig.3 Forward current as a function of forward voltage. MBG703 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 5 Philips Semiconductors General purpose double diode Product specification BAV23 handbook1, 0ha2lfpage IR (µA) 10 (1) 1 (2) MBG381 10 1 10 2 0 100 Tj (oC) 200 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. Fig.5 Reverse current as a function of junction temperature. 1.0 handbook, halfpage Cd (pF) 0.8 0.6 MBG447 0.4 0.2 0 2 4 6 VR (V) 8 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth RS = 50 Ω V = VR IF x R S D.U.T. IF SAMPLING OSCILLOSCOPE R i = 50 Ω MGA881 VR tr 10% tp 90% input signal t IF t rr t (1) output signal (1) IR = 3 mA. 1996 Sep 17 Fig.7 Reverse recovery voltage test circuit and waveforms. 6 Philips Semiconductors General purpose double diode PACKAGE OUTLINE Product specification BAV23 handbook, full pagewidth 0.75 0.60 0.150 0.090 10 o max 0.1 max 10 o max 1.1 max 30 o max 3.0 2.8 B 1.9 A 0.2 M A B 43 1.4 2.5 1.2 max 12 0.88 0 0.1 1.7 0.48 0 0.1 TOP VIEW 0.1 M A B MBC845 Dimensions in mm. Fig.8 SOT143. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification This data sheet contains target or goal specifications for product development. This data.


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