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BAV23S Dataheets PDF



Part Number BAV23S
Manufacturers Philips Semiconductors
Logo Philips Semiconductors
Description General purpose double diode
Datasheet BAV23S DatasheetBAV23S Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 1999 May 05 Philips Semiconductors General purpose double diode Product specification BAV23S FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose wh.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 1999 May 05 Philips Semiconductors General purpose double diode Product specification BAV23S FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose where high breakdown voltages are required. DESCRIPTION The BAV23S consists of two general purpose diodes connected in series fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection handbook, halfpa2ge 1 21 3 3 MAM232 Marking code: L31. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. Per diode VRRM VRRM VR VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage − repetitive peak reverse voltage series connection − continuous reverse voltage − continuous reverse voltage series connection − continuous forward current single diode loaded; note 1; see Fig.2 − double diode loaded; note 1; see Fig.2 − repetitive peak forward current − non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − t = 100 µs − t = 10 ms − total power dissipation storage temperature Tamb = 25 °C; note 1 − −65 junction temperature − Note 1. Device mounted on an FR4 printed-circuit board. MAX. 250 500 200 400 225 125 625 9 3 1.7 250 +150 150 UNIT V V V V mA mA mA A A A mW °C °C 1999 May 05 2 Philips Semiconductors General purpose double diode Product specification BAV23S ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER Per diode VF forward voltage VF forward voltage IR reverse current IR reverse current Cd diode capacitance trr reverse recovery time CONDITIONS MAX. UNIT see Fig.3 IF = 100 mA IF = 200 mA series connection; see Fig.3 IF = 100 mA IF = 200 mA see Fig.5 VR = 200 V VR = 200 V; Tj = 150 °C series connection VR = 400 V VR = 400 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 1.0 1.25 2.0 2.5 100 100 100 100 5 50 V V V V nA mA nA mA pF ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp Rth j-a thermal resistance from junction to tie-point thermal resistance from junction to ambient Note 1. Device mounted on an FR4 printed-circuit board. CONDITIONS note 1 VALUE 360 500 UNIT K/W K/W 1999 May 05 3 Philips Semiconductors General purpose double diode GRAPHICAL DATA 300 IF (mA) 200 MBD033 single diode loaded double diode loaded 100 600 handbook, halfpage IF (mA) 400 200 Product specification BAV23S MBG384 (1) (2) (3) 0 0 100 Tamb ( oC) 200 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 0 0 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) 10 MBG703 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 05 4 Philips Semiconductors General purpose double diode Product specification BAV23S handbook1, 0ha2lfpage IR (µA) 10 (1) 1 (2) MBG381 10 1 10 2 0 100 Tj (oC) 200 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. Fig.5 Reverse current as a function of junction temperature. 1.0 handbook, halfpage Cd (pF) 0.8 MBG447 0.6 0.4 0.2 0 2 4 6 VR (V) 8 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth RS = 50 Ω V = VR IF x R S D.U.T. IF SAMPLING OSCILLOSCOPE R i = 50 Ω MGA881 VR tr 10% tp 90% input signal t IF t rr t (1) output signal (1) IR = 3 mA. 1999 May 05 Fig.7 Reverse recovery voltage test circuit and waveforms. 5 Philips Semiconductors General purpose double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads Product specification BAV23S SOT23 DB E AX 3 1 e1 bp e 2 wM B HE v M A A A1 Q detail X Lp c 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 E 1.4 1.2 e e1 HE Lp Q v 1.9 0.95 2.5 2.1 0.45 0.55 0.15 0.45 0.2 w 0.1 OUTLINE VERSION SOT23 1999 May 05 IEC REFERENCES JEDEC EIAJ 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors General purpose double diode Product specification BAV23S DEFINITIONS Data Sheet Status Objective specification Preliminary specification Produ.


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