Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV23S General purpose double diode
Product specification Supersedes data of 1998 Jan 08
1999 May 05
Philips Semiconductors
General purpose double diode
Product specification
BAV23S
FEATURES
• Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:
max. 200 V • Repetitive peak reverse voltage:
max. 250 V • Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose where high breakdown voltages are required.
DESCRIPTION
The BAV23S consists of two general purpose diodes connected in series fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
PINNING
PIN 1 2 3
DESCRIPTION anode cathode common connection
handbook, halfpa2ge
1
21
3 3 MAM232
Marking code: L31.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode VRRM VRRM VR VR IF
IFRM IFSM
Ptot Tstg Tj
repetitive peak reverse voltage
−
repetitive peak reverse voltage
series connection
−
continuous reverse voltage
−
continuous reverse voltage series connection
−
continuous forward current single diode loaded; note 1; see Fig.2 −
double diode loaded; note 1; see Fig.2 −
repetitive peak forward current
−
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs
−
t = 100 µs
−
t = 10 ms
−
total power dissipation storage temperature
Tamb = 25 °C; note 1
− −65
junction temperature
−
Note 1. Device mounted on an FR4 printed-circuit board.
MAX.
250
500
200 400 225 125 625
9 3 1.7 250 +150 150
UNIT
V
V
V V mA mA mA
A A A mW °C °C
1999 May 05
2
Philips Semiconductors
General purpose double diode
Product specification
BAV23S
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode VF forward voltage
VF forward voltage
IR reverse current
IR reverse current
Cd diode capacitance trr reverse recovery time
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 100 mA IF = 200 mA series connection; see Fig.3
IF = 100 mA IF = 200 mA see Fig.5
VR = 200 V VR = 200 V; Tj = 150 °C series connection
VR = 400 V VR = 400 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7
1.0 1.25
2.0 2.5
100 100
100 100 5 50
V V
V V
nA mA
nA mA pF ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp Rth j-a
thermal resistance from junction to tie-point thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS note 1
VALUE 360 500
UNIT K/W K/W
1999 May 05
3
Philips Semiconductors
General purpose double diode
GRAPHICAL DATA
300 IF (mA)
200
MBD033
single diode loaded
double diode loaded 100
600
handbook, halfpage
IF (mA)
400
200
Product specification
BAV23S
MBG384
(1) (2)
(3)
0 0 100 Tamb ( oC) 200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
0 0 1 VF (V) 2
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
102
handbook, full pagewidth
IFSM (A)
10
MBG703
1
10−1 1
10
102
103
tp (µs)
104
Based on square wave currents. Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 05
4
Philips Semiconductors
General purpose double diode
Product specification
BAV23S
handbook1, 0ha2lfpage IR (µA) 10
(1)
1
(2)
MBG381
10 1
10 2 0
100 Tj (oC) 200
(1) VR = 200 V; maximum values. (2) VR = 200 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
1.0
handbook, halfpage
Cd (pF)
0.8
MBG447
0.6
0.4
0.2 0 2 4 6 VR (V) 8
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
RS = 50 Ω V = VR IF x R S
D.U.T. IF
SAMPLING OSCILLOSCOPE
R i = 50 Ω
MGA881
VR
tr 10%
tp
90%
input signal
t IF
t rr t
(1)
output signal
(1) IR = 3 mA.
1999 May 05
Fig.7 Reverse recovery voltage test circuit and waveforms. 5
Philips Semiconductors
General purpose double diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
Product specification
BAV23S
SOT23
DB
E AX
3
1
e1 bp e
2
wM B
HE v M A
A A1
Q
detail X
Lp
c
0 1 2 mm scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1 max.
bp
c
D
mm
1.1 0.9
0.1
0.48 0.38
0.15 0.09
3.0 2.8
E
1.4 1.2
e e1 HE Lp Q v
1.9
0.95
2.5 2.1
0.45 0.55 0.15 0.45
0.2
w 0.1
OUTLINE VERSION
SOT23
1999 May 05
IEC
REFERENCES
JEDEC
EIAJ
6
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Philips Semiconductors
General purpose double diode
Product specification
BAV23S
DEFINITIONS
Data Sheet Status
Objective specification Preliminary specification Produ.