LET16045C
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Datasheet - producti...
LET16045C
RF power
transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Datasheet - production data
M243 epoxy sealed
Figure 1. Pin out
1 3
Features
Excellent thermal stability Common source configuration POUT (@28 V) = 45 W with 16 dB gain @ 1600
MHz
BeO free package In compliance with the 2002/95/EC European
directive
Description
The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications.
1. Drain 2. Gate
2 3. Source
Order code LET16045C
Table 1. Device summary Package M243
Branding LET16045C
April 2014
This is information on a product in full production.
DocID022224 Rev 3
1/9
www.st.com
Maximum ratings
1 Maximum ratings
LET16045C
Symbol
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Parameter
Value
V(BR)DSS VGS ID PDISS TJ TSTG
Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature
80 -0.5 to +15
9 100 200 -65 to +150
Unit V V A W °C °C
Table 3. Thermal data
Symbol
Parameter
Rth(JC) Junction-case thermal resistance
Value 1.3
Unit °C/W
2/9 DocID022224 Rev 3
LET16045C
2 Electrical characteristics
TC = 25 °C
Symbol
Table 4. Static T...