Built in SBD N Channel Power MOS FET
RJK03N4DPA
30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed swi...
Description
RJK03N4DPA
30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
Preliminary Datasheet
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5678
5 678 D DDD
4321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 30 ±20 45 180 45 19 36.1 45 2.78 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0785EJ0200 Rev.2.00 Feb 12, 2013
Page 1 of 6
RJK03N4DPA
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time...
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