IRFS5615PbF

DIGITAL AUDIO MOSFET PD - 96204 IRFS5615PbF IRFSL5615PbF Features Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low QG and QSW for Better THD and Improved Efficiency Low QRR for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Can Deliver up to 300W per Channel into 4Ω Load in Half-Bridge Configuration Amplifier Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 150 34.5 26 11 2.7 175 DD D V m: nC nC Ω °C G S G S D G S D2Pak TO-262 IRFS5615PbF IRFSL5615PbF GDS Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ ...