IRF8327SPBF

IRF8327SPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET® Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.2nC 3.0nC 1.2nC 19nC 7.9nC 1.9V SQ DirectFET® ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conducti...