IRFS4510PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.3mΩ max. 13.9mΩ S ID (Silicon Limited) 61A D D DS G D2Pak IRFS4510PbF DS G TO-262 IRFSL4510PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) dSingle Pulse Avalanche Energy IAR Avalanche Current fEAR Repetitive Avalanche Energy Thermal Resistance Parameter iRθJC Junction-to-Case ijRθJA Junction-to-Ambient Max. 61 43 250 140 0.95 ± 20 3.2 -55 to + 175 300 x x10lb in (1.1N m) 130 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– Max. 1.05 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W www.irf.com 1 4/10/12 IRFS/SL4510PbF Static @ TJ...