STFI11NM65N

STF11NM65N, STFI11NM65N, STP11NM65N Datasheet N-channel 650 V, 425 mΩ typ., 11 A MDmesh II Power MOSFETs in TO-220FP, I²PAKFP and TO-220 packages TAB Features 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N 100% avalanche tested d D(2, TAB) Low input capacitance and gate charge ro Low gate input resistance te P Applications ole G(1) Switching applications bs Description O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. olete Prod Product status links ObsSTF11NM65N STFI11NM65N STP11NM65N DS14294 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com STF11NM65N, STFI11NM65N, STP11NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220FP, I²PAKFP TO-220 VDS Drain-source voltage 650 V VGS Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C ID ) Drain current (continuous) at TC = 100 °C t(s IDM (1) Drain current (pulsed) uc PTOT Total power dissipation at TC = 25 °C rod IAR Avalanche current,...