LMUN2211LT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network ●FEATURES 1)Simplifies Circuit Design 2)Reduces Board Space and Component Count 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 4) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device LMUN2211LT1G LMUN2211LT3G Marking A8A A8A Shipping 3000/Tape&Reel 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ Ta = 25°C(Note 1.) Derate above 25°C Symbol VCBO VCEO IC PD Limits 50 50 100 246 1.5 Unit V V mA mW °C/W LMUN2211LT1G S-LMUN2211LT1G 3 1 2 SOT–23 (TO–236AB) PIN 1 BASE (INPUT) R 1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) ●THERMAL CHARACTERISTICS Parameter Thermal Resistance – Junction-to-Ambient (Note 1.) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol Limits Unit RθJA 508 °C/W Topr, Tstg –55 to +150 °C TL 260 °C 10 Sec ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Parameter Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO Min. – ...