Silicon MOSFET type Integrated Circuit
MIP3550MTSCF
Type Application Structure Equivalent Circuit Package
Silicon MOSFET type Integrated Circuit
For Switch...
Description
MIP3550MTSCF
Type Application Structure Equivalent Circuit Package
Silicon MOSFET type Integrated Circuit
For Switching Power Supply Control
CMOS type
See Fig. 9
DIP7-A1-B
Marking
MIP355
A.ABSOLUTE MAXIMUM RATINGS (Ta=25℃±3℃)
NO. Item
Symbol
Ratings
Unit Note
1 DRAIN Voltage 2 VDD Voltage 3 Feedback Voltage 4 Feedback Current 5 f Voltage 6 CL Voltage 7 Output Peak Current 8 Channel Temperature 9 Storage Temperature
VD VDD VFB IFB
Vf VCL IDP Tch Tstg
-0.3 ~ 700 -0.3 ~ 8 -0.3 ~ 6
500 -0.3 ~ 8 -0.3 ~ 8
3(※1) 150
-55 ~ +150
※1: V
It is guaranteed within the pulse as below. V Leading Edge Blanking Pulse + Current Limit Delay V ton(BLK)+td(OCL)
uA
V
V
A
℃
℃
B.ELECTRICAL CHARACTERISTICS No. Item
Measure Condition (TC=25℃±3℃)
Symbol
Measure Condition (See Fig. 1)
Typ. Min. Max. Unit
【CONTROL FUNCTIONS】 *Design Guarantee Item
1 Output Frequency
fosc
VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA
Vf=VDD, VCL=0V, after dis_OLP
43.5
2 Jitter Frequency Deviation
*3 Jitter Frequency Modulation Rate
4 Maximum Duty Cycle 5 VDD Start Voltage 6 VDD Stop Voltage 7 VDD Hysteresis
Δf fM MAXDC
VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP
VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP
VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP
3 150 70
VD=5V, IFB=30uA, VCL=0V, Vf=VDD VDD(ON)
5.9
VD=5V, IFB=30uA, VCL=0V, Vf=VDD VDD(OFF)
4.9
VDD(ON)-VDD(OFF) VDDHYS
1.0
39 1.2 - 65 5.4 4.4 0.5
48 kHz 4.8 kHz - Hz 75 % 6.4 V 5.4 V 1.5 ...
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