N-CHANNEL MOSFET
N N- CHANNEL MOSFET
R
JCS13N50C
MAIN CHARACTERISTICS
ID 13 A
VDSS
500 V
Rdson-max(@Vgs=10V) 0.49Ω
Qg-typ
27 nC
...
Description
N N- CHANNEL MOSFET
R
JCS13N50C
MAIN CHARACTERISTICS
ID 13 A
VDSS
500 V
Rdson-max(@Vgs=10V) 0.49Ω
Qg-typ
27 nC
z z z UPS
APPLICATIONS
z High frequency switching mode power supply
z Electronic ballast z UPS
Package
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS13N50CC-O-C-N-B JCS13N50CC-O-CA-N-B JCS13N50FC-O-F-N-B
JCS13N50CC JCS13N50CC JCS13N50FC
Package
TO-220C TO-220AB TO-220MF
Halogen Free
NO NO NO
Packaging
Tube Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
JCS13N50C
Value
Parameter - Drain-Source Voltage
Symbol VDSS
JCS13N50CC JCS13N50FC 500
Unit V
Drain Current -Continuous
ID T=25℃ T=100℃
13.0 8
13.0* 8*
A A
( 1) Drain Current -Pulse (note 1)
IDM
52 52* A
Gate-Source Voltage
VGSS
±30 V
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
840 mJ
( 1) Avalanche Current
(note 1)
IAR
13.0 A
( 1)
Repetitive Avalanche Energy (note 1)
EAR
4.8 mJ
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
4.5 V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃
190 1.57
49 W 0.39 W/℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature TL for Soldering Purposes
*
*Drain current limited by maximum junction temperature
-55~+150 300
℃ ℃
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E...
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