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NVJD4401N Dataheets PDF



Part Number NVJD4401N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal MOSFET
Datasheet NVJD4401N DatasheetNVJD4401N Datasheet (PDF)

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devices are Pb−Free and are RoHS Compliant Applications • Load Power Switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C unless otherwis.

  NVJD4401N   NVJD4401N


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NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devices are Pb−Free and are RoHS Compliant Applications • Load Power Switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C Steady TA = 25°C State TA = 85°C t ≤10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, TSTG 20 ±12 0.63 0.46 0.27 0.14 0.91 0.65 0.55 0.29 ±1.2 −55 to 150 Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 0.63 TL 260 Unit V V A W A W A °C A °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Units Junction−to−Ambient – Steady State RqJA 400 458 °C/W Junction−to−Lead (Drain) – Steady State RqJL 194 252 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. www.onsemi.com V(BR)DSS 20 V RDS(on) Typ 0.29 W @ 4.5 V 0.36 W @ 2.5 V ID Max 0.63 A SC−88 (SOT−363) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 1 SC−88/SOT−363 CASE 419B STYLE 28 6 TD M G G 1 S1 G1 D2 TD = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 7 1 Publication Order Number: NTJD4401N/D NTJD4401N, NVJD4401N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/TJ VGS = 0 V, ID = 250 mA Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) IDSS IGSS VGS = 0 V, VDS = 16 V VDS = 0 V, VGS = ±12 V Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VGS = VDS, ID = 250 mA Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES RDS(on) gFS VGS = 4.5 V, ID = 0.63 A VGS = 2.5 V, ID = 0.40 A VDS = 4.0 V, ID = 0.63 A Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD SWITCHING CHARACTERISTICS (Note 3) VGS = 0 V, f = 1.0 MHz, VDS = 20 V VGS = 4.5 V, VDS = 10 V, ID = 0.63 A Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS =0.23 A TJ = 125°C Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.63 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. Min 20 0.6 Typ 27 22 0.92 −2.1 0.29 0.36 2.0 33 13 2.8 1.3 0.1 0.2 0.4 0.083 0.227 0.786 0.506 0.76 0.63 0.410 Max Unit V mV/ °C 1.0 mA 10 mA 1.5 V mV/ °C 0.375 0.445 W S 46 pF 22 5.0 3.0 nC ms 1.1 V ms www.onsemi.com 2 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTJD4401N, NVJD4401N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.4 VGS = 4.5 V to 2.2 V 1.2 VGS = 2 V TJ = 25°C 1.8 V 1 0.8 0.6 1.6 V 0.4 0.2 0 0 1.4 V 1.2 V 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics ID, DRAIN CURRENT (AMPS) 1.2 VDS ≥ 10 V 1 0.8 0.6 0.4 TJ = 125°C 0.2 0 0 25°C TJ = −55°C 0.4 0.8 1.2 1.6 2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.7 VGS = 4.5 V 0.6 0.5 TJ = 125°C 0.4 0.3 TJ = 25°C 0.2 TJ = −55°C 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 0.7 VGS = 2.5 V 0.6 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Temperature 2 ID = 0.63 A 1.8 VGS = 4.5 V and 2.5 V 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ, JUNCTIO.


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