Document
NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Power Switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Based on RqJA)
Power Dissipation (Based on RqJA)
Continuous Drain Current (Based on RqJL)
Power Dissipation (Based on RqJL)
Pulsed Drain Current
Steady TA = 25°C State
TA = 85°C Steady TA = 25°C State
TA = 85°C Steady TA = 25°C State
TA = 85°C Steady TA = 25°C State
TA = 85°C t ≤10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD IDM TJ, TSTG
20 ±12 0.63 0.46 0.27 0.14 0.91 0.65 0.55 0.29 ±1.2 −55 to 150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS 0.63 TL 260
Unit V V A
W
A
W
A
°C
A °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Typ Max Units
Junction−to−Ambient – Steady State
RqJA 400 458 °C/W
Junction−to−Lead (Drain) – Steady State RqJL 194 252
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
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V(BR)DSS 20 V
RDS(on) Typ 0.29 W @ 4.5 V
0.36 W @ 2.5 V
ID Max 0.63 A
SC−88 (SOT−363)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING DIAGRAM & PIN ASSIGNMENT
D1 G2 S2
1
SC−88/SOT−363 CASE 419B STYLE 28
6
TD M G G
1 S1 G1 D2
TD = Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 7
1
Publication Order Number: NTJD4401N/D
NTJD4401N, NVJD4401N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2)
IDSS IGSS
VGS = 0 V, VDS = 16 V VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance CHARGES AND CAPACITANCES
RDS(on) gFS
VGS = 4.5 V, ID = 0.63 A VGS = 2.5 V, ID = 0.40 A VDS = 4.0 V, ID = 0.63 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz, VDS = 20 V
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time
td(ON) tr
td(OFF) tf
VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS =0.23 A
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.63 A
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
Min 20
0.6
Typ
27 22
0.92 −2.1
0.29 0.36 2.0
33 13 2.8 1.3 0.1 0.2 0.4
0.083 0.227 0.786 0.506
0.76 0.63 0.410
Max Unit
V mV/ °C
1.0 mA 10 mA
1.5 V mV/ °C
0.375 0.445
W S
46 pF 22 5.0 3.0 nC
ms
1.1 V ms
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ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTJD4401N, NVJD4401N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.4 VGS = 4.5 V to 2.2 V
1.2 VGS = 2 V
TJ = 25°C
1.8 V 1
0.8 0.6 1.6 V
0.4
0.2
0 0
1.4 V 1.2 V
2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
ID, DRAIN CURRENT (AMPS)
1.2 VDS ≥ 10 V
1
0.8
0.6
0.4 TJ = 125°C
0.2
0 0
25°C
TJ = −55°C
0.4 0.8 1.2 1.6 2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.7 VGS = 4.5 V
0.6
0.5 TJ = 125°C
0.4
0.3 TJ = 25°C 0.2 TJ = −55°C
0.1
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and Temperature
0.7 VGS = 2.5 V
0.6
0.5
TJ = 125°C
0.4 TJ = 25°C
0.3 TJ = −55°C 0.2
0.1
0 0 0.2 0.4 0.6 0.8 1
1.2 1.4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and Temperature
2 ID = 0.63 A
1.8 VGS = 4.5 V and 2.5 V
1.6
1.4
1.2
1
0.8
0.6 −50
−25 0 25 50 75 100 125 TJ, JUNCTIO.