NVTJD4001N

NTJD4001N, NVTJD4001N MOSFET – Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC Q101 Qualified − NVTJD4001N These Devices are Pb−Free and are RoHS Compliant Applications Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25 °C State TA = 85 °C Steady TA = 25 °C State VDSS VGS ID PD 30 V ±20 V 250 mA 180 272 mW Pulsed Drain Current t =10 ms IDM 600 mA Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 250 mA TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Ambient − Steady State RqJA 458 °C/W Junction−to−Lead − Steady State RqJL 252 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2015 1 May, 2019− Rev. 7 ww...