NVDD5894NL

NVDD5894NL Power MOSFET 40 V, 10 mW, 64 A, Dual N−Channel DPAK−5L Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2qJ&A 3) Power (Notes Dissipation 1 & 2) RqJA Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 40 "20 64 45 75 38 14 10 3.8 1.9 324 −55 to +175 V V A W A W A °C Source Current (Body Diode) IS 75 A Single Pulse Drain−to−Source Avalanche EAS 94 mJ Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) RqJC 2.0 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1....