DatasheetsPDF.com

NVDD5894NLT4G Dataheets PDF



Part Number NVDD5894NLT4G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVDD5894NLT4G DatasheetNVDD5894NLT4G Datasheet (PDF)

NVDD5894NL Power MOSFET 40 V, 10 mW, 64 A, Dual N−Channel DPAK−5L Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC .

  NVDD5894NLT4G   NVDD5894NLT4G



Document
NVDD5894NL Power MOSFET 40 V, 10 mW, 64 A, Dual N−Channel DPAK−5L Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2qJ&A 3) Power (Notes Dissipation 1 & 2) RqJA Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 40 "20 64 45 75 38 14 10 3.8 1.9 324 −55 to +175 V V A W A W A °C Source Current (Body Diode) IS 75 A Single Pulse Drain−to−Source Avalanche EAS 94 mJ Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) RqJC 2.0 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. http://onsemi.com V(BR)DSS 40 V RDS(on) Max 10 mW @ 10 V 14.5 mW @ 4.5 V Dual N−Channel D ID Max 64 A G1 G2 S1 S2 DPAK 5−LEAD CASE 175AA MARKING DIAGRAM & PIN ASSIGNMENT Drain YWW 58 94LG x S1 G1 G2 S2 Y WW 5894L G = Year = Work Week = Specific Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NVDD5894NLT4G DPAK−5 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 0 1 Publication Order Number: NVDD5894NL/D NVDD5894NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) V(BR)DSS IDSS IGSS VGS = 0 V, ID = 250 mA VGS = 0 V VDS = 40 V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = ±20 V 40 1 100 ±100 V mA nA Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance.


NVDD5894NL NVDD5894NLT4G NTMD6N04


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)