Document
NVDD5894NL
Power MOSFET
40 V, 10 mW, 64 A, Dual N−Channel DPAK−5L
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation (Note 1)
RqJC
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ&A 3)
Power (Notes
Dissipation 1 & 2)
RqJA
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
40 "20
64 45 75 38 14
10
3.8 1.9 324 −55 to +175
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 75 A
Single Pulse Drain−to−Source Avalanche
EAS 94 mJ
Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
2.0 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS 40 V
RDS(on) Max 10 mW @ 10 V 14.5 mW @ 4.5 V
Dual N−Channel D
ID Max 64 A
G1 G2 S1 S2
DPAK 5−LEAD CASE 175AA
MARKING DIAGRAM & PIN ASSIGNMENT
Drain
YWW 58 94LG
x
S1 G1 G2 S2
Y WW 5894L G
= Year = Work Week = Specific Device Code = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVDD5894NLT4G DPAK−5 2500 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number: NVDD5894NL/D
NVDD5894NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
V(BR)DSS IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V VDS = 40 V
TJ = 25°C TJ = 125°C
VDS = 0 V, VGS = ±20 V
40
1 100 ±100
V mA
nA
Gate Threshold Voltage Drain−to−Source On Resistance
Forward Transconductance.