NTMD6N04R2G

NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features Designed for use in low voltage, high speed switching applications Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.5 V (Typ) Miniature SOIC−8 Surface Mount Package Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Converters Computers Printers Cellular and Cordless Phones Disk Drives and Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current (Note 1) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Drain Current (Note 2) − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VGS ID IDM ID 40 "20 5.8 29 4.6 V V Adc Apk Adc PD TJ, Tstg 2.0 1.29 −55 to +150 W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 Vdc, VGS = 5.0 Vdc, Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) EAS RqJA 245 mJ °C/W 62.5 97 Max...