Document
NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.5 V (Typ)
• Miniature SOIC−8 Surface Mount Package Saves Board Space • Diode is Characterized for Use in Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters • Computers • Printers • Cellular and Cordless Phones • Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current (Note 1) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms)
Drain Current (Note 2) − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Operating and Storage Temperature Range
VDSS VGS
ID IDM ID
40 "20
5.8 29 4.6
V V
Adc Apk Adc
PD TJ, Tstg
2.0 1.29 −55 to +150
W °C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 Vdc, VGS = 5.0 Vdc, Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)
EAS RqJA
245 mJ °C/W
62.5 97
Maximum Lead Temperature for Soldering Purposes for 10 Sec
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s 2. When surface mounted to an FR4 board using 1″ pad size, t = steady state
http://onsemi.com
VDSS 40 V
RDS(ON) Typ 27 mW @ VGS = 10 V
ID Max 5.8 A
N−Channel D
D
GG
SS
8 1
SOIC−8 CASE 751 STYLE 11
MARKING DIAGRAM & PIN ASSIGNMENT
D1 D1 D2 D2 8
E6N04 AYWW G
G
1 S1 G1 S2 G2
E6N04 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD6N04R2G NVMD6N04R2G*
SOIC−8 (Pb−Free)
SOIC−8 (Pb−Free)
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 2
1
Publication Order Number: NTMD6N04R2/D
NTMD6N04, NVMD6N04
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
Symbol
OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive.