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NVMD6N04 Dataheets PDF



Part Number NVMD6N04
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVMD6N04 DatasheetNVMD6N04 Datasheet (PDF)

NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Space • Diode is Characterized for Use in Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • NVMD Prefix for Automotive and Other A.

  NVMD6N04   NVMD6N04



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NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Space • Diode is Characterized for Use in Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Converters • Computers • Printers • Cellular and Cordless Phones • Disk Drives and Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current (Note 1) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Drain Current (Note 2) − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VGS ID IDM ID 40 "20 5.8 29 4.6 V V Adc Apk Adc PD TJ, Tstg 2.0 1.29 −55 to +150 W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 Vdc, VGS = 5.0 Vdc, Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) EAS RqJA 245 mJ °C/W 62.5 97 Maximum Lead Temperature for Soldering Purposes for 10 Sec TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s 2. When surface mounted to an FR4 board using 1″ pad size, t = steady state http://onsemi.com VDSS 40 V RDS(ON) Typ 27 mW @ VGS = 10 V ID Max 5.8 A N−Channel D D GG SS 8 1 SOIC−8 CASE 751 STYLE 11 MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 8 E6N04 AYWW G G 1 S1 G1 S2 G2 E6N04 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMD6N04R2G NVMD6N04R2G* SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 2 1 Publication Order Number: NTMD6N04R2/D NTMD6N04, NVMD6N04 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive.


NTMD6N04R2G NVMD6N04 NVMFD5483NL


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