NVMFD5485NL

NVMFD5485NL MOSFET – Power, Dual N-Channel 60 V, 44 mW, 20 A Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Current RqJC (Notes 1, 2, 4) Power Dissipation RqJC (Notes 1, 2) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 19.5 A 13.8 38.5 W 19.2 Continuous Drain Current RqJA (Notes 1, 3 & 4) Power Dissipation RqJA (Notes 1 & 3) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 5.3 A 3.8 2.9 W 1.4 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 113 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS 37 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 25 A, L = 0.1 mH, RG = 25 W) EAS 31 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MA...