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MGSF1N02LT1G

ON Semiconductor

Power MOSFET

MGSF1N02L, MVGSF1N02L Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(o...


ON Semiconductor

MGSF1N02LT1G

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Description
MGSF1N02L, MVGSF1N02L Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space MVGSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID 750 mA IDM 2000 Total Power Dissipation @ TA = 25°C PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses a...




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