Power MOSFET
MGSF1N02L, MVGSF1N02L
Power MOSFET 750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(o...
Description
MGSF1N02L, MVGSF1N02L
Power MOSFET 750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space MVGSF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
VDSS 20 Vdc
Gate−to−Source Voltage − Continuous
VGS ± 20 Vdc
Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms)
ID 750 mA IDM 2000
Total Power Dissipation @ TA = 25°C
PD 400 mW
Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C
Thermal Resistance, Junction−to−Ambient RqJA
300 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses a...
Similar Datasheet