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MVMBF0201NLT1G Dataheets PDF



Part Number MVMBF0201NLT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MVMBF0201NLT1G DatasheetMVMBF0201NLT1G Datasheet (PDF)

MMBF0201NL, MVMBF0201NL Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • .

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MMBF0201NL, MVMBF0201NL Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MVMBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VGS ID ID IDM PD TJ, Tstg RqJA TL 20 ± 20 300 240 750 225 − 55 to 150 556 260 Vdc Vdc mAdc mW °C °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 300 mAMPS − 20 VOLTS RDS(on) = 1 W N−Channel 3 1 2 MARKING DIAGRAM AND PIN ASSIGNMENT 33 Drain 1 2 SOT−23 CASE 318 STYLE 21 N1 M G G 12 Gate Source N1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBF0201NLT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel MVMBF0201NLT1G* SOT−23 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 5 1 Publication Order Number: MMBF0201NLT1/D MMBF0201NL, MVMBF0201NL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W) Fall Time Gate Charge (See Figure 5) SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf QT IS ISM VSD Min Typ Max Unit 20 − − Vdc mAdc − − 1.0 − − 10 − − ±100 nAdc 1.0 1.7 2.4 Vdc − 0.75 1.0 − 1.0 1.4 W − 450 − mMhos − 45 − − 25 − − 5.0 − pF − 2.5 − − 2.5 − − 15 − − 0.8 − − 1400 − ns pC − − 0.3 − − 0.75 − 0.85 − A V http://onsemi.com 2 MMBF0201NL, MVMBF0201NL TYPICAL ELECTRICAL CHARACTERISTICS I D , DRAIN CURRENT (AMPS) 1.0 0.8 0.6 0.4 125°C 0.2 25°C - 55°C 0 01 234 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics I D , DRAIN CURRENT (AMPS) 1.0 VGS = 5 V 0.8 VGS = 4 V 0.6 VGS = 10, 9, 8, 7, 6 V 0.4 0.2 VGS = 3 V 0 0 0.3 0.6 0.9 1.2 1.4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. On−Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) ON-RESISTANCE (OHMS) 1.5 1.2 0.9 VGS = 4.5 V 0.6 VGS = 10 V 0.3 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current 2.4 2.0 1.5 1.0 0.5 0 0 5 10 15 20 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 4. On−Resistance versus Gate−to−Source Voltage VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 1.10 VGS(th) , NORMALIZED 14 12 VDS = 16 V 10 ID = 300 mA 1.05 1.00 0.95 0.90 ID = 250 mA 8 0.85 6 0.80 0.75 4 0.70 2 0.65 0 0.60 0 160 450 2000 3400 -25 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE (pC) TEMPERATURE (°C) Figure 5. Gate Charge Figure 6. Threshold Voltage Variance Over Temperature http://onsemi.com 3 RDS(on), NORMALIZED (OHMS) C, CAPACITANCE (p.


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