Document
MMBF0201NL, MVMBF0201NL
Power MOSFET 300 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space
• MVMBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current
− Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
VDSS VGS
ID ID IDM PD TJ, Tstg RqJA TL
20 ± 20
300 240 750 225 − 55 to 150 556 260
Vdc Vdc mAdc
mW °C °C/W °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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300 mAMPS − 20 VOLTS RDS(on) = 1 W
N−Channel 3
1
2
MARKING DIAGRAM AND PIN ASSIGNMENT
33 Drain
1 2
SOT−23 CASE 318 STYLE 21
N1 M G G
12 Gate Source
N1 = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBF0201NLT1G
Package
SOT−23 (Pb−Free)
Shipping†
3000 / Tape & Reel
MVMBF0201NLT1G* SOT−23 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1
Publication Order Number: MMBF0201NLT1/D
MMBF0201NL, MVMBF0201NL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2)
(VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V)
Turn−On Delay Time
Rise Time Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS IDSS
IGSS
VGS(th) rDS(on)
gFS
Ciss Coss Crss
td(on) tr
td(off) tf QT
IS ISM VSD
Min Typ Max
Unit
20 −
− Vdc
mAdc − − 1.0 − − 10
−
−
±100
nAdc
1.0 1.7 2.4
Vdc
− 0.75 1.0 − 1.0 1.4
W
− 450 − mMhos
− 45 − − 25 − − 5.0 −
pF
− 2.5 − − 2.5 − − 15 − − 0.8 − − 1400 −
ns pC
− − 0.3 − − 0.75 − 0.85 −
A V
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MMBF0201NL, MVMBF0201NL
TYPICAL ELECTRICAL CHARACTERISTICS
I D , DRAIN CURRENT (AMPS)
1.0
0.8
0.6
0.4 125°C
0.2 25°C - 55°C
0 01 234 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics
I D , DRAIN CURRENT (AMPS)
1.0 VGS = 5 V
0.8 VGS = 4 V
0.6 VGS = 10, 9, 8, 7, 6 V
0.4
0.2 VGS = 3 V
0 0 0.3 0.6 0.9 1.2 1.4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. On−Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
ON-RESISTANCE (OHMS)
1.5
1.2
0.9 VGS = 4.5 V
0.6 VGS = 10 V
0.3
0 0 0.2 0.4 0.6 0.8 1
ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current
2.4 2.0
1.5
1.0
0.5
0 0 5 10 15 20 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 4. On−Resistance versus Gate−to−Source Voltage
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16 1.10
VGS(th) , NORMALIZED
14
12 VDS = 16 V 10 ID = 300 mA
1.05 1.00 0.95 0.90
ID = 250 mA
8 0.85
6 0.80
0.75 4
0.70
2 0.65
0 0.60 0 160 450 2000 3400 -25 0 25 50 75 100 125 150
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (°C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance Over Temperature
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RDS(on), NORMALIZED (OHMS) C, CAPACITANCE (p.