Document
MMBF2201N, NVF2201N
Power MOSFET 300 mAmps, 20 Volts
N−Channel SC−70/SOT−323
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves
Board Space
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current
− Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C
VDSS VGS
ID ID IDM PD
20 Vdc ± 20 Vdc
mAdc 300 240 750
150 mW 1.2 mW/°C
Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TJ, Tstg RqJA TL
− 55 to 150 833 260
°C °C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
300 mAMPS, 20 VOLTS RDS(on) = 1 W
N−Channel 3
1
2
1 2
MARKING DIAGRAM AND PIN ASSIGNMENT
3 3
Drain
SC−70/SOT−323 CASE 419 STYLE 8
N1 M G G
12 Gate Source
N1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBF2201NT1G SOT−323 (Pb−Free)
3000 / Tape & Reel
NVF2201NT1G*
SOT−323 (Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 7
1
Publication Order Number: MMBF2201NT1/D
MMBF2201N, NVF2201N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current
Pulsed Current
Forward Voltage (Note 3) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS IDSS
IGSS
VGS(th) rDS(on)
gFS
Ciss Coss Crss
td(on) tr
td(off) tf QT
IS ISM VSD
Min Typ Max
Unit
20 −
− Vdc
mAdc − − 1.0 − − 10
−
−
±100
nAdc
1.0 1.7 2.4
Vdc
− 0.75 1.0 − 1.0 1.4
W
− 450 − mMhos
− 45 − − 25 − − 5.0 −
pF
− 2.5 − − 2.5 − − 15 − − 0.8 − − 1400 −
ns pC
− − 0.3 − − 0.75 − 0.85 −
A V
ID, DRAIN CURRENT (AMPS) RDS, ON RESISTANCE (OHMS)
TYPICAL CHARACTERISTICS
1.0
0.9 0.8 VGS = 4 V
0.7
0.6 0.5 VGS = 3.5 V
0.4
0.3 VGS = 3 V 0.2 0.1 VGS = 2.5 V
0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 1. Typical Drain Characteristics
1.6
1.4
1.2 VGS = 4.5 V
1.0 ID = 100 mA
0.8
0.6
VGS = 10 V ID = 300 mA
0.4
0.2
0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
http://onsemi.com 2
RDS, ON RESISTANCE (OHMS)
MMBF2201N, NVF2201N
TYPICAL CHARACTERISTICS
10
8 ID = 300 mA
6
4
2
0 0 1 2 3 4 5 6 7 8 9 10 GATE - SOURCE VOLTAGE (VOLTS) Figure 3. On Resistance versus Gate −Source Voltage
RDS, ON RESISTANCE (OHMS)
1.2
1.0 VGS = 4.5 V
0.8
0.6 VGS = 10 V
0.4
0.2
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS) Figure 4. On Resistance versus Drain Current
1.0
0.1
0.01
0.001 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE - DRAIN FORWARD VOLTAGE (VOLTS)
Figure 5. Source −Drain Forward Voltage
1.0
C, CAPACITANCE (pF)
45 40 VGS = 0 V
F = 1 mHz 35
30
25
20 Ciss
15 .