STD110N02R

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C Limited by Package − Continuous @ TA = 25°C Limited by Wires − Single Pulse (tp = 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA = 25°C Operating and Storage Temperature Range VDSS VGS RqJC PD ID ID ID ID RqJA PD ID RqJA PD ID TJ, Tstg 24 ±20 1.35 110 110 110 32 110 52 2.88 17.5 100 1.5 12.5 −55 to 175 V V °C/W W A A A A °C/W W A °C/W W A °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, L = 1.0 mH, RG = 25 W) EAS 120 mJ Maximum Le...