Power MOSFET
NTD4804N, NVD4804N
MOSFET – Power, Single, N-Channel, DPAK/IPAK
30 V, 117 A
Features
• Low RDS(on) to Minimize Conduct...
Description
NTD4804N, NVD4804N
MOSFET – Power, Single, N-Channel, DPAK/IPAK
30 V, 117 A
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant
Applications
CPU Power Delivery DC−DC Converters Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (RqJA) (Note 1)
Power Dissipation (RqJA) (Note 1)
Continuous Drain Current (RqJA) (Note 2)
Power Dissipation (RqJA) (Note 2)
Continuous Drain Current (RqJC) (Note 1)
Steady State
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
VDSS VGS ID
PD ID
PD ID
30
V
"20
V
19.6
A
15.2
2.66 W
14.5
A
11
1.43 W
124
A
96
Power Dissipation (RqJC) (Note 1)
TC = 25°C
PD
107
W
Pulsed Drain Current tp=10ms TA = 25°C IDM
230
A
Current Limited by Package
TA = 25°C IDmaxPkg
45
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175
Source Current (Body Diode) Drain to Source dV/dt
IS dV/dt
78
A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 30 A, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
EAS
450 mJ
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If an...
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