NVTFS4C08N

MOSFET – Power, Single N-Channel, m8FL 30 V, 5.9 mW, 55 A NVTFS4C08N Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2, 4) VDSS 30 V VGS ±20 V TA = 25°C ID 17 A TA = 100°C 12 Power Dissipation RqJA TA = 25°C PD (Note 1, 2, 4) Steady TA = 100°C Continuous Drain State TA = 25°C ID Current RqJC (Note 1, 3, 4) TA = 100°C 3.1 W 1.6 55 39 A Power Dissipation RqJC (Note 1, 3, 4) TA = 25°C PD TA = 100°C 31 W 15 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 253 A Operating Junction and Storage Temperature TJ, −55 to °C Tstg +175 Source Current (Body Diode) IS 28 A Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, IL = 20 Apk, L = 0.1 mH) 20 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and r...