NTD4810N

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N These Devices are Pb−Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain (CNuortreen1t)(RqJC) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C Power Dissipation (RqJC) (Note 1) TC = 25°C Pulsed Drain Current tp=10ms TA = 25°C Current Limited by Package TA = 25°C Operating Junction and Storage Temperature VDSS VGS ID PD ID PD ID PD IDM IDmaxPkg TJ, Tstg 30 "20 12.4 9.6 2.62 9 7 1.4 54 42 50 120 45 −55 to 175 V V A W A W A W A A °C Source Current (Body Diode) Drain to Source dV/dt IS dV/dt 41 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 14 A, RG = 25 W) EAS 98 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Re...