NVTFS4C10N

NVTFS4C10N MOSFET – Power, Single N-Channel, m8FL 30 V, 7.4 mW, 47 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C10NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2, 4) VDSS 30 V VGS ±20 V TA = 25°C ID 15.3 A TA = 100°C 10.8 Power Dissipation RqJA TA = 25°C PD (Notes 1, 2, 4) Steady TA = 100°C Continuous Drain Current RyJC (Notes 1, 3, 4) State TC = 25°C ID TC = 100°C 3.0 W 1.5 47 A 33 Power Dissipation RyJC (Notes 1, 3, 4) TC = 25°C PD TC = 100°C 28 W 14 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 196 A Operating Junction and Storage Temperature TJ, −55 to °C Tstg +175 Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, VGS = 10 V, IL = 10.2 A, L = 0.5 mH) 26 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, d...