N-Channel MOSFET. FDP8N50NZU Datasheet

FDP8N50NZU Datasheet PDF, Equivalent


Part Number

FDP8N50NZU

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
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FDP8N50NZU Datasheet
FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
February 2010
UniFET-IITM
tm
Features
• RDS(on) = 1.0( Typ.) @ VGS = 10V, ID = 3.25A
• Low Gate Charge ( Typ. 14nC)
• Low Crss ( Typ. 5pF)
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
This N-Channel enhancement mode power field effect transistors
are prod uced using F airchild's pro prietary, planar str ipe, DMOS
technology.
This advance t echnology ha s been especially t ailored to
minimize on-st ate r esistance, provide super ior switchin g
performance, and withst and high energy pulse in the avalanch e
and commutation mode. The se devices are well suit ed for hig h
efficient switching mode pow er supplies and active p ower factor
correction.
D
G
GDS
TO-220
FDP Series
GDS
TO-220F
FDPF Series
(potted)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
S
Symbol
Parameter
FDP8N50NZU FDPF8N50NZU Units
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
±25
6.5 6.5*
3.9 3.9*
26 26*
80
6.5
13
20
130 40
1 0.32
-55 to +150
300
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP8N50NZU FDPF8N50NZU Units
0.96 3.1
0.5 - oC/W
62.5 62.5
©2010 Fairchild Semiconductor Corporation
FDP8N50NZU / FDPF8N50NZU Rev. A
1
www.fairchildsemi.com

FDP8N50NZU Datasheet
Package Marking and Ordering Information
Device Marking
FDP8N50NZU
FDPF8N50NZU
Device
FDP8N50NZU
FDPF8N50NZU
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±25V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 4A
VDS = 20V, ID = 4A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V,ID = 6.5A
VGS = 10V 
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 6.5A
RG = 25, VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6.5A
dIF/dt = 100A/s (Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
1.0
6.3
565
80
5
14
4
6
17
34
43
27
-
-
-
50
0.05
Quantity
50
50
Max. Units
-V
- V/oC
25
250
A
±10 A
5.0 V
1.2
-S
735 pF
105 pF
8 pF
18 nC
- nC
- nC
45 ns
80 ns
95 ns
60 ns
6.5 A
26 A
1.6 V
- ns
- C
FDP8N50NZU / FDPF8N50NZU Rev. A
2
www.fairchildsemi.com


Features Datasheet pdf FDP8N50NZU / FDPF8N50NZU N-Channel MOSFE T FDP8N50NZU / FDPF8N50NZU N-Channel M OSFET 500V, 6.5A, 1.2 February 2010 UniFET-IITM tm Features • RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • L ow Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Improve d v/dt Capability • ESD Improved Capabi lity • RoHS Compliant Description Th is N-Channel enhancement mode power fie ld effect transistors are prod uced usi ng F airchild's pro prietary, planar st r ipe, DMOS technology. This advance t echnology ha s been especially t ailore d to minimize on-st ate r esistance, pr ovide super ior switchin g performance, and withst and high energy pulse in th e avalanch e and commutation mode. The se devices are well suit ed for hig h e fficient switching mode pow er supplies and active p ower factor correction. D G GDS TO-220 FDP Series GDS TO-2 20F FDPF Series (potted) MOSFET Maximu m Ratings TC = 25oC unless otherwise noted S Symbol Parameter FDP8N50NZU FDPF8N.
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