Power MOSFET
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Description
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95947A
IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
G RDS(on) = 12mΩ S ID = 57A
TO-220AB
D2Pak
TO-262
IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface iJunction-to-Ambient jJunction-to-Ambient (PCB Mount)
www.irf.com
Max...
Similar Datasheet