N-Channel Power Trench MOSFET
FDMC86260 N-Channel Power Trench® MOSFET
FDMC86260
N-Channel Power Trench® MOSFET
150 V, 16 A, 34 mΩ
December 2012
Fe...
Description
FDMC86260 N-Channel Power Trench® MOSFET
FDMC86260
N-Channel Power Trench® MOSFET
150 V, 16 A, 34 mΩ
December 2012
Features
General Description
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Pin 1
Pin 1
S S SG
S S
D D
D DD D
Top Bottom
Power 33
SD GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 150 ±20 16 5.4 48 121 54 2.3
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1) (Note 1a)
2.3 53
°C/W
Device Marking FDMC86260
Device FDMC86260
Package Power33
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMC8...
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