FDMC86260

FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December 2012 Features General Description „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A „ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ Termination is Lead-free „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 150 ±20 16 5.4 48 121 54 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 2.3 53 °C/W Device Marking FDMC86260 Device FDMC86260 Package Power33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMC8...