FDMC8321L

FDMC8321L N-Channel PowerTrench® MOSFET February 2013 FDMC8321L N-Channel Power Trench® MOSFET 40 V, 49 A, 2.5 mΩ Features „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A „ Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A „ Advanced Package and Silicon combination for low rDS(on) and hign efficiency „ Next Generation enhanced body diode technology, engineered for soft recovery „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance. Applications „ Synchronous rectifier „ Load switch/Orring „ Motor switch Top Bottom S Pin 1 S S G S S D D D D D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 40 ±20 49 22 100 86 40 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking ...