Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTC143ELT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
50 −10 to +10
100 200 150 −55 to +150
Unit
V V mA mW C C
3
1 2 SOT–23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC143ELT1G
A8J
4.7 4.7 3000/Tape & Reel
LDTC143ELT3G
A8J
4.7 4.7 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage Input current Output current
VI(off) VI(on) VO(on)
II IO(off)
− 3 − − −
DC current gain
GI 30
Input resistance
R1 3.29
Resistance ratio
R2/R1
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
0.8 −
Typ. − − 0.1 − −
− 4.7 1 250
Max. Unit
0.5 V −V 0.3 V 1.8 mA 0.5 µA
−−
6.11 1.2 −
kΩ − MHz
Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V
VO=5V, IO=10mA − −
VCE=10V, IE= −5mA, f=100MHz
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LESHAN RADIO COMPANY, LTD. LDTC143ELT1G
zElectrical characteristic curves
INPUT VOLTAGE : VI(on) (V)
100 VO=0.3V
50
20
10
5
Ta= −40°C 25°C
100°C 2
1
500m
200m 100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
10m VCC=5V
5m
2m Ta=100°C
1m 25°C 500µ −40°C 200µ 100µ 50µ
20µ 10µ 5µ
2µ 1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
1k VO=5V
500
200
Ta=100°C 25°C
100 −40°C
50
20 10
5
2
1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
OUTPUT VOLTAGE : VO(on) (V)
1 lO/lI=20
500m 200m Ta=100°C
25°C 100m −40°C 50m
20m 10m 5m
2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
DC CURRENT GAIN : GI
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LESHAN RADIO COMPANY, LTD. LDTC143ELT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 .