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LDTC143ELT1G Dataheets PDF



Part Number LDTC143ELT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistors
Datasheet LDTC143ELT1G DatasheetLDTC143ELT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC143ELT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost co.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC143ELT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits 50 −10 to +10 100 200 150 −55 to +150 Unit V V mA mW C C 3 1 2 SOT–23 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC143ELT1G A8J 4.7 4.7 3000/Tape & Reel LDTC143ELT3G A8J 4.7 4.7 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Input voltage Output voltage Input current Output current VI(off) VI(on) VO(on) II IO(off) − 3 − − − DC current gain GI 30 Input resistance R1 3.29 Resistance ratio R2/R1 Transition frequency fT ∗ ∗ Characteristics of built-in transistor 0.8 − Typ. − − 0.1 − − − 4.7 1 250 Max. Unit 0.5 V −V 0.3 V 1.8 mA 0.5 µA −− 6.11 1.2 − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA − − VCE=10V, IE= −5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTC143ELT1G zElectrical characteristic curves INPUT VOLTAGE : VI(on) (V) 100 VO=0.3V 50 20 10 5 Ta= −40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) 10m VCC=5V 5m 2m Ta=100°C 1m 25°C 500µ −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1k VO=5V 500 200 Ta=100°C 25°C 100 −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) 1 lO/lI=20 500m 200m Ta=100°C 25°C 100m −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DC CURRENT GAIN : GI 2/3 LESHAN RADIO COMPANY, LTD. LDTC143ELT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 .


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