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LDTC114GLT3G Dataheets PDF



Part Number LDTC114GLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistors
Datasheet LDTC114GLT3G DatasheetLDTC114GLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTC114GLT1G 3 1 2 SOT-23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC114GLT1G H8 10 3000/Tape & Reel LDTC114GLT3G H8 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R2 fT ∗ Min. 50 50 5 − 300 − 30 7 − Typ. Max. −− −− −− − 0.5 − 580 − 0.3 −− 10 13 250 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=720µA VCB=50V VEB=4V IC=10mA, IB=0.5mA IC=5mA, VCE=5V − VCE=10V, IE= −5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) z Electrical characteristic curves 1k VCE=5V 500 200 100 Ta=25°C 50 Ta=100°C Ta= −40°C 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current LDTC114GLT1G 1 IC/IB=20/1 500m 200m 100m 50m 20m 10m 5m Ta=100°C Ta=25°C Ta= −40°C 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTC114GLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm 3/3 .


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