Document
MPSA92 MPSA93
SILICON HIGH VOLTAGE PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA92 and MPSA93 are silicon PNP transistors designed for high voltage applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
Thermal Resistance
JC
MPSA92 300
MPSA93 200
300 200
5.0
500
625
1.5
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=200V
ICEO
VCE=160V
IEBO
VEB=3.0V
BVCBO
IC=100μA
BVCEO
IC=1.0mA
BVEBO
IE=100μA
VCE(SAT) IC=20mA, IB=2.0mA
VBE(SAT) IC=20mA, IB=2.0mA
hFE VCE=10V, IC=1.0mA
hFE VCE=10V, IC=10mA
hFE VCE=10V, IC=30mA
fT VCE=20V, IC=10mA, f=100MHz
Cob VCB=20V, IE=0, f=1.0MHz
MPSA92 MIN MAX
- 250 -- 100 300 300 5.0 - 0.5 - 0.9 25 40 25 50 - 6.0
MPSA93 MIN MAX
-- 250 - 100 200 200 5.0 - 0.4 - 0.9 25 40 25 50 - 8.0
UNITS V V V mA
mW W °C °C/W °C/W
UNITS nA nA nA V V V V V
MHz pF
R2 (15-December 2014)
MPSA92 MPSA93 SILICON HIGH VOLTAGE PNP TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R2 (15-December 2014)
MPSA92 MPSA93
SILICON HIGH VOLTAGE PNP TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R2 (15-December 2014)
MPSA92 MPSA93 SILICON HIGH VOLTAGE PNP TRANSISTORS
SERVICES • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) • Bare Die Available for Hybrid Applications
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R2 (15-December 2014) w w w. c e n t r a l s e m i . c o m
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