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MCH6341 Dataheets PDF



Part Number MCH6341
Manufacturers Sanyo
Logo Sanyo
Description P-Channel Silicon MOSFET
Datasheet MCH6341 DatasheetMCH6341 Datasheet (PDF)

Ordering number : ENA1272A MCH6341 SANYO Semiconductors DATA SHEET MCH6341 Features • Low ON-resistance • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device Applications • 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg C.

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Ordering number : ENA1272A MCH6341 SANYO Semiconductors DATA SHEET MCH6341 Features • Low ON-resistance • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device Applications • 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --30 ±20 --5 --20 1.5 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7022A-009 2.0 654 0.15 MCH6341-TL-E MCH6341-TL-H Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.1 0.07 0.85 0.25 1.6 0.25 LOT No. LOT No. 0 t o 0.02 YQ 1 23 0.65 0.3 123 654 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 TL Electrical Connection 1, 2, 5, 6 3 4 http://semicon.sanyo.com/en/network 62012 TKIM/73008PE TIIM TC-00001516 No. A1272-1/7 MCH6341 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=--3A, VGS=--10V ID=--1.5A, VGS=--4.5V ID=--1.5A, VGS=--4V VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--5A IS=--5A, VGS=0V Switching Time Test Circuit VIN 0V --10V VIN PW=10μs D.C.≤1% G VDD= --15V ID= --3A RL=5Ω D VOUT MCH6341 P.G 50Ω S min --30 Ratings typ --1.2 2.8 4.8 45 71 82 430 105 75 7.5 26 45 35 10 2.0 2.5 --0.87 max --1 ±10 --2.6 59 100 115 --1.5 Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Ordering Information Device MCH6341-TL-E MCH6341-TL-H Package MCPH6 MCPH6 Shipping 3,000pcs./reel 3,000pcs./reel memo Pb Free Pb Free and Halogen Free No. A1272-2/7 MCH6341 Drain Current, ID -- A --16.0V --10.0V --6.0V --4.5V --4.0V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID -- VDS --5.0 --4.5 --3.5V --4.0 --3.5 --3.0 --3.0V --2.5 --2.0 --1.5 --1.0 --0.5 0 0 160 140 VGS= --2.5V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V IT13379 RDS(on) -- VGS Ta=25°C 120 100 ID= --1.5A --3.0A 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 Gate-to-So| uyrcfse V|ol-t-ageI,DVGS -- V 10 7 VDS= --10V --14 --16 IT13381 5 3 2 Ta= --25°C75°C 1.0 25°C 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A SW Time -- ID 2 VDD= --15V VGS= --10V 100 7 5 td(off) tf 3 2 23 5 7 --10 IT13383 tr 10 td(on) 7 5 3 2 --0.1 23 5 7 --1.0 23 5 7 --10 Drain Current, ID -- A IT13385 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ciss, Coss, Crss -- pF Source Current, IS -- A Ta=75°C 25°C --25°C Drain Current, ID -- A --6 VDS= --10V --5 ID -- VGS --4 --3 --2 Ta=75°C 25°C --25°C --1 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V IT13380 RDS(on) -- Ta 160 140 120 100 80 60 VVGGSS==V---G-41S.00=VV,-,-I4IDD.5==V,----I31D..05=AA--1.5A 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C --10 7 VGS=0V 5 IS -- VSD 140 160 IT13382 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 --0.2 1000 7 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS --1.2 IT13384 f=1MHz 5 Ciss 3 2 100 7 5 3 0 Coss Crss --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V IT13386 No. A1272-3/7 Forward Transfer Admittance, | yfs | -- S Switching Time, SW Time -- ns Gate-to-Source Voltage, VGS -- V MCH6341 --10 VDS= --15V --9 ID= --5A --8 VGS -- Qg --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC IT13387 PD -- Ta 2.0 When mounted on ceramic substrate 1.8 (1200mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13896 Drain Current, ID -- A ASO 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IDP= --20A PW≤10μs ID= --5A 1m10s0μs Operation in this area is limited by RDS(oDnC)o. peration10(T0am1=0s2m5°sC) --0.1 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate --0.01 (1200mm2×0.8mm) --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 23 5 IT13895 Allowable Power Dissipation, PD -- W No..


74F258A MCH6341 DSEI20


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