Document
Ordering number : ENA1272A
MCH6341
SANYO Semiconductors
DATA SHEET
MCH6341
Features
• Low ON-resistance • Halogen free compliance
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
• 4V drive • Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings --30 ±20 --5 --20 1.5 150
--55 to +150
Unit V V A A W °C °C
Package Dimensions unit : mm (typ) 7022A-009
2.0 654
0.15
MCH6341-TL-E MCH6341-TL-H
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
2.1 0.07 0.85 0.25 1.6 0.25
LOT No. LOT No.
0 t o 0.02
YQ
1 23 0.65 0.3
123 654
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain
SANYO : MCPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network 62012 TKIM/73008PE TIIM TC-00001516 No. A1272-1/7
MCH6341
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss
Coss
Crss
td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=--3A, VGS=--10V ID=--1.5A, VGS=--4.5V ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--5A
IS=--5A, VGS=0V
Switching Time Test Circuit
VIN 0V
--10V
VIN
PW=10μs D.C.≤1%
G
VDD= --15V
ID= --3A RL=5Ω D VOUT
MCH6341 P.G 50Ω S
min --30
Ratings typ
--1.2 2.8
4.8 45 71 82 430 105 75 7.5 26 45 35 10 2.0 2.5 --0.87
max --1
±10 --2.6
59 100 115
--1.5
Unit
V μA μA V S
mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
Ordering Information
Device MCH6341-TL-E MCH6341-TL-H
Package MCPH6 MCPH6
Shipping 3,000pcs./reel 3,000pcs./reel
memo Pb Free Pb Free and Halogen Free
No. A1272-2/7
MCH6341
Drain Current, ID -- A --16.0V --10.0V --6.0V --4.5V --4.0V
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
ID -- VDS
--5.0
--4.5 --3.5V
--4.0
--3.5
--3.0
--3.0V
--2.5
--2.0
--1.5
--1.0 --0.5
0 0
160
140
VGS= --2.5V
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT13379
RDS(on) -- VGS
Ta=25°C
120
100 ID= --1.5A --3.0A
80
60
40
20
0 0 --2 --4 --6 --8 --10 --12
Gate-to-So| uyrcfse V|ol-t-ageI,DVGS -- V
10
7 VDS= --10V
--14 --16 IT13381
5
3 2
Ta= --25°C75°C
1.0 25°C
7
5
3 2
0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
2
VDD= --15V VGS= --10V
100
7
5 td(off)
tf
3
2
23
5 7 --10 IT13383
tr 10 td(on)
7
5
3
2 --0.1
23
5 7 --1.0
23
5 7 --10
Drain Current, ID -- A
IT13385
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Ciss, Coss, Crss -- pF
Source Current, IS -- A Ta=75°C 25°C --25°C
Drain Current, ID -- A
--6
VDS= --10V
--5
ID -- VGS
--4
--3
--2
Ta=75°C 25°C --25°C
--1
0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT13380
RDS(on) -- Ta
160
140
120
100 80 60
VVGGSS==V---G-41S.00=VV,-,-I4IDD.5==V,----I31D..05=AA--1.5A
40
20
0 --60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
--10
7 VGS=0V
5
IS -- VSD
140 160 IT13382
3 2
--1.0 7 5
3 2
--0.1 7 5 3 2
--0.01 --0.2
1000
7
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
--1.2 IT13384
f=1MHz
5 Ciss
3 2
100 7 5
3 0
Coss Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT13386 No. A1272-3/7
Forward Transfer Admittance, | yfs | -- S
Switching Time, SW Time -- ns
Gate-to-Source Voltage, VGS -- V
MCH6341
--10
VDS= --15V --9 ID= --5A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0 0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT13387
PD -- Ta
2.0
When mounted on ceramic substrate 1.8 (1200mm2×0.8mm)
1.6 1.5 1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13896
Drain Current, ID -- A
ASO
5
3 2
--10 7 5
3 2
--1.0 7 5
3 2
IDP= --20A
PW≤10μs
ID= --5A
1m10s0μs
Operation in this area is limited by
RDS(oDnC)o. peration10(T0am1=0s2m5°sC)
--0.1 7
5 Ta=25°C
3 Single pulse 2 When mounted on ceramic substrate --0.01 (1200mm2×0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
23 5 IT13895
Allowable Power Dissipation, PD -- W
No..