Fast Recovery Epitaxial Diode
Fast Recovery Epitaxial Diode (FRED)
DSEI 20
IFAVM = 17 A VRRM = 1200 V trr = 40 ns
VRSM V
1200
VRRM V
1200
Type DS...
Description
Fast Recovery Epitaxial Diode (FRED)
DSEI 20
IFAVM = 17 A VRRM = 1200 V trr = 40 ns
VRSM V
1200
VRRM V
1200
Type DSEI 20-12A
TO-220 AC
AC C A
A = Anode, C = Cathode
C
Symbol IFRMS IFAVM ÿÿx IFRM IFSM
I2t
TVJ TVJM Tstg Ptot Md Weight
Symbol
IR
VF
VT0 rT RthJC RthJA trr IRM
Test Conditions
TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C Mounting torque
Maximum Ratings
70 17 220
130 140
110 120
85 80
60 60
-40...+150 150
-40...+150
78
0.4...0.6
2
A A A
A A
A A
A2s A2s
A2s A2s
°C °C °C
W
Nm
g
Test Conditions
Characteristic Values typ. max.
TVJ = 25°C TVJ = 25°C TVJ = 125°C
VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM
IF = 12 A;
TVJ = 150°C TVJ = 25°C
For power-loss calculations only TVJ = TVJM
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms L £ 0.05 mH; TVJ = 100°C
40 7
750 mA 250 mA
7 mA
1.87 V 2.15 V
1.65 V 18.2 mW
1.6 K/W 60 K/W
60 ns
A
Features
q International standard package q Glass passivated chips q Very short recovery time q Extremely low losses at high
switching frequencies q Low I -values
RM
q Soft recovery behaviour q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency switching device...
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