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IRF740 Dataheets PDF



Part Number IRF740
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF740 DatasheetIRF740 Datasheet (PDF)

www.vishay.com IRF740 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 63 9.0 32 Single 0.55 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of comp.

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www.vishay.com IRF740 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 63 9.0 32 Single 0.55 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF740PbF IRF740PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12) c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 400 ± 20 10 6.3 40 1.0 520 10 13 125 4.0 -55 to +150 300 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m S21-0853-Rev. D, 16-Aug-2021 1 Document Number: 91054 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRF740 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 400 V, VGS = 0 V VDS = 320 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 6.0 A b VDS = 50 V, ID = 6.0 A b 400 - - V - 0.49 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.55 Ω 5.8 - - S Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Internal drain inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg LD Internal source inductance LS Drain-Source Body Diode Characteristics VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - - 330 - pF - 120 - - VGS = 10 V ID = 10 A, VDS = 320 V, see fig. 6 and 13 b - - - 63 - 9.0 nC - 32 - 14 - VDD = 200 V, ID = 10 A Rg = 9.1 Ω, RD = 20 Ω, see fig. 10 b - 27 - ns - 50 - - 24 - f = 1 MHz, open drain 0.8 - 5.9 Ω Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 - nH - 7.5 - Continuous source-drain diode current IS MOSFET symbol showing the D - - 10 Pulsed diode forward current a integral reverse G ISM p - n junction diode A - - 40 S Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time VSD TJ = 25 °C, IS = 10 A, VGS = 0 V b - - 2.0 V trr Qrr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b - 370 790 ns 3.8 8.2 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0853-Rev. D, 16-Aug-2021 2 Document Number: 9105.


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