N-Channel Power MOSFET
NVTFS4C13N
MOSFET – Power, Single N-Channel, m8FL
30 V, 9.4 mW, 40 A
Features
• Low RDS(on) to Minimize Conduction Los...
Description
NVTFS4C13N
MOSFET – Power, Single N-Channel, m8FL
30 V, 9.4 mW, 40 A
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 2, 4)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
14
A
TA = 100°C
10
Power Dissipation RqJA
TA = 25°C
PD
(Note 1, 2, 4)
Steady TA = 100°C
Continuous Drain Current RqJC (Note 1, 3, 4)
State TC = 25°C
ID
TC = 100°C
3.0 W 1.5 40
28
A
Power Dissipation RqJC (Note 1, 3, 4)
TC = 25°C
PD
TC = 100°C
26 W 13
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
152 A
Operating Junction and Storage Temperature
TJ, −55 to °C
Tstg
+175
Source Current (Body Diode)
IS
24
A
Single Pulse Drain−to−Source Avalanche Energy
EAS
(TJ = 25°C, IL = 14 Apk, L = 0.1 mH)
10 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and re...
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