NVTFS4C25N

MOSFET - Power, Single N-Channel, m8FL 30 V, 17 mW, 22 A NVTFS4C25N Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C25NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 3, 5) Power Dissipation RqJA (Notes 1, 3, 5) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 85°C Continuous Drain Current RyJC (Notes 1, 2, 4, 5) Power Dissipation RyJC (Notes 1, 2, 4, 5) Steady State TC = 25°C TC = 85°C TC = 25°C TC = 85°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 30 V ±20 V 10.1 A 7.8 3.0 W 1.8 22.1 A 17.1 14.3 W 8.6 90 A −55 to °C +175 Source Current (Body Diode) IS 14 A Single Pulse Drain−to−Source Avalanche Energy EAS 11.2 mJ (TJ = 25°C, IL = 6.7 Apk, L = 0.5 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damag...