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MGSF1N03L Dataheets PDF



Part Number MGSF1N03L
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet MGSF1N03L DatasheetMGSF1N03L Datasheet (PDF)

MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery.

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MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJL Steady TA = 25°C ID State TA = 85°C 2.1 A 1.5 Power Dissipation RqJL Steady TA = 25°C PD State 0.69 W Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C 1.6 A 1.2 Power Dissipation (Note 1) TA = 25°C PD 0.42 W Pulsed Drain Current ESD Capability (Note 3) tp = 10 ms IDM 6.0 A C = 100 pF, ESD 125 V RS = 1500 W Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A Lead Temperature for Soldering Purposes TL 260 °C (1/8” from case for 10 sec) THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300 Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. www.onsemi.com V(BR)DSS 30 V RDS(on) TYP 80 mW @ 10 V 125 mW @ 4.5 V N−Channel D ID MAX 2.1 A G S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 SOT−23 N3 M G G CASE 318 STYLE 21 1 Gate 2 Source N3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MGSF1N03LT1G MGSF1N03LT3G SOT−23 Pb−Free SOT−23 (Pb−Free) MVGSF1N03LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel 10000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1996 1 May, 2019 − Rev. 11 Publication Order Number: MGSF1N03LT1/D MGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) V(BR)DSS 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IDSS − − IGSS − mAdc − 1.0 − 10 − ±100 nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) W − 0.08 0.10 − 0.125 0.145 DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF Output Capacitance Transfer Capacitance (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Coss Crss − 100 − − 40 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Fall Time td(on) − 2.5 − ns tr − 1.0 − td(off) − 16 − tf − 8.0 − Gate Charge (See Figure 6) QT − 6000 − pC SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 5) VSD − 0.8 − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 I D , DRAIN CURRENT (AMPS) MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERIS.


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