Document
MGSF1N03L, MVGSF1N03L
MOSFET – Single, N-Channel, SOT-23
30 V, 2.1 A
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJL
Steady TA = 25°C
ID
State TA = 85°C
2.1
A
1.5
Power Dissipation RqJL
Steady TA = 25°C PD State
0.69
W
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State
TA = 85°C
1.6
A
1.2
Power Dissipation (Note 1)
TA = 25°C PD
0.42
W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
IDM
6.0
A
C = 100 pF,
ESD
125
V
RS = 1500 W
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Source Current (Body Diode)
IS
2.1
A
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8” from case for 10 sec)
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Foot − Steady State
RqJL
180 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
300
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
250
Junction−to−Ambient − Steady State (Note 2) RqJA
400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0.
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V(BR)DSS 30 V
RDS(on) TYP 80 mW @ 10 V 125 mW @ 4.5 V
N−Channel D
ID MAX 2.1 A
G
S
MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain
1
SOT−23
N3 M G G
CASE 318
STYLE 21
1 Gate
2 Source
N3 = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MGSF1N03LT1G MGSF1N03LT3G
SOT−23 Pb−Free
SOT−23 (Pb−Free)
MVGSF1N03LT1G SOT−23 (Pb−Free)
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1996
1
May, 2019 − Rev. 11
Publication Order Number: MGSF1N03LT1/D
MGSF1N03L, MVGSF1N03L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc)
V(BR)DSS
30
−
−
Vdc
Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS −
−
IGSS
−
mAdc
−
1.0
−
10
−
±100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
W
−
0.08
0.10
−
0.125
0.145
DYNAMIC CHARACTERISTICS Input Capacitance
(VDS = 5.0 Vdc)
Ciss
−
140
−
pF
Output Capacitance Transfer Capacitance
(VDS = 5.0 Vdc) (VDG = 5.0 Vdc)
Coss Crss
−
100
−
−
40
−
SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time
Rise Time Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W)
Fall Time
td(on)
−
2.5
−
ns
tr
−
1.0
−
td(off)
−
16
−
tf
−
8.0
−
Gate Charge (See Figure 6)
QT
−
6000
−
pC
SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current
IS
−
−
0.6
A
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 5)
VSD
−
0.8
−
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature.
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I D , DRAIN CURRENT (AMPS)
MGSF1N03L, MVGSF1N03L
TYPICAL ELECTRICAL CHARACTERIS.