Document
NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
• Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit
Design
• Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Notebooks:
♦ Level Shifters ♦ Logic Switches ♦ Low Side Load Switches
• Portable Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25°C State TA = 85°C
Steady State
VDSS VGS ID
PD
30 ±20 0.5 0.37 0.69
V V A
W
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
t < 10 s TA = 25°C TA = 85°C
t<5s
ID PD
0.56 A 0.40 0.83 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM 1.7 A
TJ, −55 to °C Tstg 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS 1.0 A TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
180 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS 30 V
RDS(on) TYP 1.0 W @ 4.0 V 1.5 W @ 2.5 V
ID MAX 0.56 A
N−Channel 3
1
2
3
1 2
SOT−23 CASE 318 STYLE 21
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain
TR8 M G G
1 Gate
2 Source
TR8 = Specific Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR4003NT1G SOT−23 (Pb−Free)
NTR4003NT3G SOT−23 (Pb−Free)
NVR4003NT3G SOT−23 (Pb−Free)
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 4
1
Publication Order Number: NTR4003N/D
NTR4003N, NVR4003N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS/TJ
40
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3)
IDSS IGSS
VGS = 0 V, VDS = 30 V
TJ = 25°C
VDS = 0 V, VGS = ±10 V
1.0 mA ±1.0 mA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)
VGS = VDS, ID = 250 mA
0.8
1.4 V
VGS(TH)/TJ
3.4 mV/°C
Drain−to−Source On Resistance
Forward Transconductance CHARGES AND CAPACITANCES
RDS(on) gFS
VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VDS = 3.0 V, ID = 10 mA
1.0 1.5 W
1.5 2.0
0.33 S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 4)
Ciss Coss Crss QG(TOT) QG(TH) QGS QGD
VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
21 42 19.7 40 pF 8.1 16 1.15 0.15
nC 0.32 0.23
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W
16.7 47.9 65.1 64.2
ns
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 mA
TJ = 125°C
0.65 0.7 V 0.45
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 8A/ms, IS = 10 mA
14 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.6 VGS = 10 V to 5 V
1.2
4.5 V
1.6 VDS ≥ 10 V
1.2
TJ = −55°C
ID, DRAIN CURRENT (A)
0.8
0.4 0 0
10 8
4V
3.5 V
2.5 V 1 VDS, DRAIN−TO−SOURCE VOLTAGE .