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NVR4003NT3G Dataheets PDF



Part Number NVR4003NT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal MOSFET
Datasheet NVR4003NT3G DatasheetNVR4003NT3G Datasheet (PDF)

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoH.

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NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Notebooks: ♦ Level Shifters ♦ Logic Switches ♦ Low Side Load Switches • Portable Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C State TA = 85°C Steady State VDSS VGS ID PD 30 ±20 0.5 0.37 0.69 V V A W Continuous Drain Current (Note 1) Power Dissipation (Note 1) t < 10 s TA = 25°C TA = 85°C t<5s ID PD 0.56 A 0.40 0.83 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature IDM 1.7 A TJ, −55 to °C Tstg 150 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 1.0 A TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 180 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 150 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. www.onsemi.com V(BR)DSS 30 V RDS(on) TYP 1.0 W @ 4.0 V 1.5 W @ 2.5 V ID MAX 0.56 A N−Channel 3 1 2 3 1 2 SOT−23 CASE 318 STYLE 21 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TR8 M G G 1 Gate 2 Source TR8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTR4003NT1G SOT−23 (Pb−Free) NTR4003NT3G SOT−23 (Pb−Free) NVR4003NT3G SOT−23 (Pb−Free) 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 4 1 Publication Order Number: NTR4003N/D NTR4003N, NVR4003N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 40 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) IDSS IGSS VGS = 0 V, VDS = 30 V TJ = 25°C VDS = 0 V, VGS = ±10 V 1.0 mA ±1.0 mA Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH) VGS = VDS, ID = 250 mA 0.8 1.4 V VGS(TH)/TJ 3.4 mV/°C Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES RDS(on) gFS VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VDS = 3.0 V, ID = 10 mA 1.0 1.5 W 1.5 2.0 0.33 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 4) Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 21 42 19.7 40 pF 8.1 16 1.15 0.15 nC 0.32 0.23 Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time td(off) Fall Time tf SOURCE−DRAIN DIODE CHARACTERISTICS VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W 16.7 47.9 65.1 64.2 ns Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 10 mA TJ = 125°C 0.65 0.7 V 0.45 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 8A/ms, IS = 10 mA 14 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR4003N, NVR4003N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.6 VGS = 10 V to 5 V 1.2 4.5 V 1.6 VDS ≥ 10 V 1.2 TJ = −55°C ID, DRAIN CURRENT (A) 0.8 0.4 0 0 10 8 4V 3.5 V 2.5 V 1 VDS, DRAIN−TO−SOURCE VOLTAGE .


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