NVTA7002N

NTA7002N, NVTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Power Management Load Switch Level Shift Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State = 25°C VDSS VGS ID 30 "10 154 V V mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW Pulsed Drain Current tP v 10 ms IDM 618 mA Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 154 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 1. Surfac...