Power MOSFET
NTB5404N, NTP5404N, NVB5404N
Power MOSFET
40 V, 167 A, Single N−Channel, D2PAK & TO−220
Features
• Low RDS(on) • High C...
Description
NTB5404N, NTP5404N, NVB5404N
Power MOSFET
40 V, 167 A, Single N−Channel, D2PAK & TO−220
Features
Low RDS(on) High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − NVB5404N These Devices are Pb−Free and are RoHS Compliant
Applications
Electronic Brake Systems Electronic Power Steering Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
VDSS 40 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain Current − RqJC
Steady TC = 25°C State TC = 100°C
ID
167 A 118
Power Dissipation − RqJC
Steady State
TC = 25°C
PD
254 W
Continuous Drain
Current − RqJA (Note 1)
Steady TA = 25°C State
TA = 100°C
ID
24 A 17
Power Dissipation − RqJA (Note 1)
Steady TA = 25°C State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
PD
IDM TJ, TSTG
5.4 W
670
−55 to 175
A
°C
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 45 A, L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS EAS
TL
75 1000
A mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RθJC
Junction−to−Ambient (Note 1)
RθJA
1. ...
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